| 1 | Material Growth/Coating | Growth using the AIXTRON 200/4 RF-S MOCVD | Custom quotation | The MOCVD system enables the epitaxial growth of complex multilayer N- and As/P-based semiconductor structures on 2-inch or 3-inch substrates, with precise control of layer thickness and composition at the nanometre scale. |
| 2 | Material Growth/Coating | Growth using the NVTS-500-2TH1DC1RF Sputter/Thermal Evaporation System | TRY 1,500/hour (Consumables are not included.) | The sputter/thermal thin-film coating system enables thin-film growth on substrates up to 4 inches using RF/DC sputtering and thermal evaporation, with precise control over film thickness, composition and uniformity. |
| 3 | HEMS | Room-Temperature Hall Measurement (RT-HEMS) | TRY 1,950/hour (Sample preparation is not included.) | Hall mobility, Hall voltage, I-V curves, resistance and carrier concentration can be measured through the interaction between the current flowing through the material and the applied magnetic field, using a four- or six-contact sample holder. |
| 4 | HEMS | Low-Temperature Hall Measurement (LT-HEMS) | TRY 2,300/sample (Liquid nitrogen and sample preparation are not included.) | Hall mobility, Hall voltage, resistance and carrier concentration measurements can be performed between 80 and 300 K. |
| 5 | IV-CV | IV/CV Measurement using the Keithley 4200-SCS Semiconductor Characterization System | TRY 1,105/hour (Sample preparation is not included.) | Electrical properties are determined by applying voltage or current over a specified range and measuring the resulting current-voltage characteristics. |
| 6 | IV-CV | Temperature-Dependent IV/CV using the Keithley 4200-SCS Semiconductor Characterization System | TRY 1,625/hour (Sample preparation is not included.) | Electrical properties can be determined through IV-CV measurements performed between 25 and 700 °C. |
| 7 | IV-CV | I-V Measurement using the Ossila Solar Simulator | TRY 1,300/hour (Sample preparation is not included.) | I-V measurements can be performed using an AAA-class solar simulator capable of simulating the AM 1.5G spectrum across the 350–1050 nm wavelength range. |
| 8 | HIGH-RESOLUTION X-RAY DIFFRACTION | Thin-Film Measurement using the Rigaku SmartLab High-Resolution X-Ray Diffraction System | TRY 1,500/hour | XRD provides diffraction patterns of thin-film samples. It is a precise technique for determining crystal structure, film thickness, surface roughness and strain, and also enables the investigation of crystalline phases, structural properties and interfaces between layers. |
| 9 | HIGH-RESOLUTION X-RAY DIFFRACTION | Powder Sample Measurement using the Rigaku SmartLab High-Resolution X-Ray Diffraction System | TRY 1,125/hour | XRD provides diffraction patterns of powder materials and enables phase analysis as well as the determination of crystallite size, crystallographic orientation and strain. |
| 10 | HIGH-RESOLUTION X-RAY DIFFRACTION | Simulation/Analysis | Price determined according to the structure | Structures are analysed using the GlobalFit software. |
| 11 | HIGH-RESOLUTION X-RAY DIFFRACTION | X-Ray Reflectometry (XRR) using the Rigaku SmartLab High-Resolution X-Ray Diffraction System | TRY 3,250/sample | XRR analysis determines the thickness, density and roughness of single- and multilayer stacks and can be performed on both crystalline and amorphous materials. |
| 12 | PHOTOLUMINESCENCE-RAMAN SPECTROMETER SYSTEM | Unidron RT-PL | TRY 1,625/sample (Custom quotation for the 325 nm laser) | In photoluminescence measurements, the sample is excited by a light source and the emitted light is analysed to obtain information about the material’s band gap, defect structures, impurities and optoelectronic properties. |
| 13 | PHOTOLUMINESCENCE-RAMAN SPECTROMETER SYSTEM | LT-PL | TRY 2,600/hour (Custom quotation for the 325 nm laser) | The intensity spectrum of light emitted from a material cooled to cryogenic temperatures (6.5–325 K) is recorded, enabling temperature-dependent band-gap measurements and the investigation of defects. |
| 14 | PHOTOLUMINESCENCE-RAMAN SPECTROMETER SYSTEM | Liquid Sample Measurement using the Photoluminescence System | TRY 1,625/hour (Custom quotation for the 325 nm laser) | The emission spectrum of a liquid sample is analysed to determine the band gap (Eg), defect/impurity bands and radiative recombination characteristics. |
| 15 | PHOTOLUMINESCENCE-RAMAN SPECTROMETER SYSTEM | Powder Sample Measurement using the Photoluminescence System | TRY 1,625/hour (Custom quotation for the 325 nm laser) | The powder sample is prepared as a thin layer and its PL spectrum is recorded after excitation. The measurement provides information on Eg, defect emissions and surface states; peak position, intensity and FWHM are analysed. |
| 16 | PHOTOLUMINESCENCE-RAMAN SPECTROMETER SYSTEM | Raman Mapping | Custom quotation | Raman mapping records spectra at different points across a sample surface, allowing detailed mapping of chemical and structural properties, phase distribution, component homogeneity and possible structural changes. |
| 17 | PHOTOLUMINESCENCE-RAMAN SPECTROMETER SYSTEM | Raman Spectrum Measurement | TRY 975/hour | Raman measurements analyse changes in the energy of light scattered after laser excitation. They provide information on chemical bond types and geometry, molecular vibration and rotation, phase and chemical structure, stress and deformation, and the effects of environmental factors such as temperature and pressure. |
| 18 | PHOTOLUMINESCENCE-RAMAN SPECTROMETER SYSTEM | LT-Raman | TRY 2,600/hour | Low-temperature Raman measurement examines the intensity spectrum of scattered light while the material is cooled from 325 to 6.5 K. Temperature-dependent changes in peak position, intensity and FWHM enable quantitative evaluation of phonon energies and lifetimes, crystal defects/dislocations, strain and possible phase transitions. |
| 19 | PHOTOLUMINESCENCE-RAMAN SPECTROMETER SYSTEM | Liquid Sample Measurement using the Raman System | TRY 975/hour | The liquid sample is placed in a quartz cuvette and excited by a laser. Analysis of the scattered-light spectrum reveals molecular vibrations and chemical-bond characteristics. |
| 20 | PHOTOLUMINESCENCE-RAMAN SPECTROMETER SYSTEM | Powder Sample Measurement using the Raman System | TRY 975/hour | Raman measurement analyses small energy changes in light scattered from a laser-excited powder sample. It reveals chemical bond types and phase/crystal structure and provides information about strain, defects and deformation. |
| 21 | PROFILOMETER | Nanomap LS 500 Contact Profilometer | TRY 520/sample | The contact profilometer is a precision instrument for analysing surface topography at the microscopic scale. It measures conventional surface characteristics such as roughness, step height, curvature and form on materials of different sizes and types. |
| 22 | PROFILOMETER | ZeeScope Optical Profilometer | TRY 520/sample | The optical profilometer performs 2D and 3D measurements from a point, line or area and provides topographic properties such as surface morphology, step heights and surface roughness. |
| 23 | Atomic Force Microscope | High-Performance Atomic Force Microscope – Contact/Dynamic Mode | TRY 1,560/hour (An additional TRY 2,000 probe fee applies if a new probe is requested.) | The high-performance atomic force microscope operates in contact or dynamic mode depending on the tip-surface interaction. AFM data generate topographic surface maps that enable measurement of roughness, texture and other surface properties. |
| 24 | UV-VIS-NIR Spectrometer | Reflectance, Transmittance and Absorbance using the Varian Cary 5000 UV-VIS-NIR Spectrophotometer | TRY 455/sample | The UV-VIS-NIR spectrophotometer is an optical characterization system that measures reflectance, transmittance and absorbance spectra of solid and liquid samples. Parameters such as thickness, band gap, absorption coefficient and refractive index can be calculated from the resulting spectra. |
| 25 | Spectroscopic Ellipsometer | Room-Temperature Measurement using the OPT-S9000 Spectroscopic Ellipsometer | TRY 1,170/hour | The ellipsometer measures changes in light polarization upon reflection from a material, providing information on film thickness, refractive index, extinction coefficient and related properties. |
| 26 | Spectroscopic Ellipsometer | Temperature-Dependent Measurement using the OPT-S9000 Spectroscopic Ellipsometer | TRY 1,560/hour | A temperature-dependent measurement stage enables investigation of changes in optical parameters at temperatures up to 400 °C. |
| 27 | Microscope | Nikon Eclipse LV150N Optical Microscope | TRY 260/hour | Designed for high-precision analysis and optimized for advanced imaging requirements, this optical microscope produces high-quality images. |
| 28 | Microscope | Zeiss Axiolab 5 Nomarski Microscope | TRY 260/hour | Nomarski DIC enables detailed, high-contrast imaging of cells, microorganisms and thin material layers. It is especially effective for revealing structural detail in transparent and low-contrast samples. |
| 29 | Mass Spectrometer | VS Series Helium Mass Spectrometer Leak Detector | TRY 32,500/day (Leak testing is performed with a specialist. Transportation for on-site measurements is the requester’s responsibility. Helium gas is not included.) | The helium mass spectrometer leak detector is an advanced instrument for detecting and quantifying leaks in systems using helium as a tracer gas. It isolates helium from the test environment and measures the amount drawn into the system with its mass spectrometer, enabling highly sensitive leak detection. |
| 30 | Rapid Thermal Annealing | Unitemp-100 Rapid Thermal Annealing | TRY 600/sample | The rapid thermal processing system rapidly heats materials to high temperatures under vacuum or a selected gas atmosphere for purposes such as improving the mechanical properties of metals, crystallizing semiconductors and removing defects. It supports semiconductor processing, annealing, quality control, rapid thermal treatments and post-implantation annealing. |
| 31 | Wire Bonder | Kulicke & Soffa Model 4124 Gold Wire Bonder | TRY 1,040/hour | The gold wire bonder forms conductive connections from an integrated-circuit die or other devices requiring electrical interconnection. |
| 32 | Electrochemical Capacitance-Voltage Measurement (ECV) | Silicon Measurement using the Electrochemical Capacitance-Voltage (ECV) System | TRY 3,250/hour | Electrochemical capacitance-voltage measurement determines semiconductor doping profiles. Beginning at the material surface, it identifies the depth-dependent dopant concentration distribution by monitoring capacitance changes under an applied voltage, providing detailed information about the internal structure of the sample. |
| 33 | Electrochemical Capacitance-Voltage Measurement (ECV) | As/P-Based Material Measurement using Electrochemical Capacitance-Voltage (ECV) | TRY 3,250/hour | Electrochemical capacitance-voltage measurement determines semiconductor doping profiles. Beginning at the material surface, it identifies the depth-dependent dopant concentration distribution by monitoring capacitance changes under an applied voltage, providing detailed information about the internal structure of the sample. |
| 34 | Potentiostat/Galvanostat | Cyclic Voltammetry (CV), Galvanostatic Charge-Discharge (GCD), Electrochemical Impedance Spectroscopy (EIS) | Per sample: TRY 500nHourly use: TRY 750/hournMeasurements lasting 0–6 hours: TRY 750/hournMeasurements exceeding 6 hours: TRY 500/hournFor measurements exceeding 12 hours, each additional 12-hour period is charged as one day. | Cyclic Voltammetry (CV), Galvanostatic Charge-Discharge (GCD) and Electrochemical Impedance Spectroscopy (EIS) are complementary techniques that comprehensively characterize a material’s electrochemical behaviour. CV reveals oxidation-reduction processes and redox properties by sweeping the potential forward and backward. GCD monitors potential under constant current to determine energy-storage performance such as capacity, internal resistance and cycling stability. EIS measures the response to an AC signal over a broad frequency range, providing information on charge-transfer resistance, ion diffusion and interfacial properties. Together, these methods enable high-accuracy evaluation of semiconductors, thin films, batteries and supercapacitors. |
| 35 | Four-Point Probe Measurement | Sheet Resistance Measurement | TRY 100/sample | Sheet resistance measurement is a fundamental technique for determining electrical conductivity in thin films and semiconductor surfaces. A four-point probe configuration prevents contact resistance from affecting the measurement. Sheet resistance is calculated from the applied current and measured voltage, yielding precise and reliable conductivity information. The technique is particularly important for semiconductor process control, thin-film characterization and quality monitoring. |
| 36 | Four-Point Probe Measurement | Surface Mapping | TRY 350/sample | Surface mapping collects sheet-resistance measurements at multiple points across a sample in a defined pattern to evaluate conductivity distribution. It helps reveal material uniformity, local conductivity variations, manufacturing defects and thin-film thickness differences, providing valuable information for semiconductor wafers, thin films and process-development studies. |
