13 December 2024

Rigaku SmartLab High-Resolution X-Ray Diffraction (Structural Characterization) is the most fundamental method used to determine the structural characteristics and quality of semiconductor thin films, as well as the alloy ratios and lattice constants of ternary alloys, and more in a non-destructive manner. This technique provides crucial information about the chemical composition, layer orientation, epitaxial layer thickness, interlayer transitions, stresses, and dislocations in materials.

• Rigaku SmartLab performs structural analysis of thin films, powders, and bulk samples.
• This device uses a rotating anode copper (Cu) target as the X-ray source.
• The characteristic X-ray wavelength produced is Kα1=0.154059 nm.
• The power of the system is 9kW (max voltage 45 kV, max current 200 mA)
• High voltage can be adjusted between 10-45kV and current can be adjusted between 20-200mA.
• The Cu source uses a 4-crystal Ge (022) oriented monochromator and resolution of the monochromator is set to 0.003° for the (002) oriented Si substrate.
• Rigaku ganiometer theta_d arm and theta_s arm can perform precision scanning with an accuracy of 10⁻⁵ degrees, utilizing high-precision stepper motors.
• Horizontal sample holder with a flexible design, allowing for omega scans, θ 2θ – ω scans, and 2θ scans.
• Equipped with tilt (chi) axis for sample alignment, z-axis for thickness adjustment, and phi-axis for in-plane alignment.
• One of the important features that distinguishes the Rigaku x-ray system from similar x-ray systems is CBO (Cross Beam Optics) unit. This unit allows the generated beams to be adjusted to either a dispersed or fully parallel configuration in a very short time, depending on the type of scanning required.
• Bragg-Brentano (BB) in the CBO unit is used for phase identification (ID) and quantitative analysis of powder samples, and Parallel Beam (PB) is used for measurement of thin film samples, RSM measurements and rocking curve measurements.

• Rigaku SmartLab Guidance control program can control the following optical devices used for a measurement and notify the operator with a message which unit should be used:

• Slit mounted on the CBO unit,
• Soller slit or monochromator selected for the generated beam,
• Slit width selected for the generated beam,
• Length-determining slit control for beam length,
• Slit width for the beam reaching the detector,
• Analyzer selection,
• Soller slit selection for the beam reaching the detector, and
• Determination of the presence or absence of a monochromator in the system for the scattered beam.

• Measurement modes
  • Out-Plane X-Ray Scans
  • In-Plane X-Ray
  • Rocking Curves
  • Reciprocal Space Mapping (RSM)
  • Grazing Angle X-Ray Scattering (GAXS)
  • Small Angle X-Ray Scattering (SAXS)
  • Pole Figure and Phi Scans for texture analysis.

• On semiconductor structures, the following parameters can be obtainedLayer thickness

• Thickness of layers
• Full Width at Half Maximum (FWHM)
• Strain
• Lattice mismatch
• Composition of layers
• Structural stress (texture and stress)

• Special simulation programs (Global Fit, 3D Explorer) are used for detailed analysis of epitaxial thin films.
• Complex device structures (laser, detector, transistor etc.) can be analyzed.
• Measurement results and analysis are reported in a clear and understandable format.