13 December 2024

The Rigaku SmartLab High-Resolution X-Ray Diffraction (Structural Characterization) is a technique used to determine the structural characteristics and quality of semiconductor thin films, the alloy compositions and lattice constants of ternary alloys, and more. It is a non-destructive method that provides vital information on chemical composition, layer orientation, thickness of epitaxial layers, interlayer transitions, stresses, and dislocations in materials.

Key Features of Rigaku SmartLab System:

• The device performs structural analysis of thin films, powders, and bulk samples.
• Uses a rotating anode copper (Cu) target as the X-ray source.
• The characteristic X-ray wavelength produced is Kα1=0.154059 nm.
• The power of the system is 9kW (max voltage 45 kV, max current 200 mA), adjustable voltage range of 10-45 kV, and current from 20-200 mA.
• Uses a 4-crystal Ge (022) oriented monochromator and a resolution of 0.003° for Si (002) substrates.
• Features high-precision step motors for the theta_d and theta_s arms, allowing scanning with an accuracy of 10^-5 degrees.
• Horizontal sample holder with a flexible design, allowing for omega scans, θ 2θ – ω scans, and 2θ scans.
• Equipped with tilt (chi) axis for sample alignment, z-axis for thickness adjustment, and phi-axis for in-plane alignment.
• A distinguishing feature is the CBO (Cross Beam Optics) unit, which allows rapid switching of the X-ray beam between scattered or fully parallel states to suit different scanning types.
• CBO unit supports different measurement types: Bragg-Brentano (BB) for phase and quantitative analysis of powder samples, Parallel Beam (PB) for thin film measurements, RSM (Reciprocal Space Mapping), and rocking curve measurements.

Control and Measurement Modes:

• Rigaku SmartLab Guidance software controls various optical devices and informs the operator which unit to use.
• Measurement modes include:
  • Out-Plane X-Ray Scans (Dik)
  • In-Plane X-Ray Scans (Paralel)
  • Rocking Curves
  • Reciprocal Space Mapping (RSM)
  • Grazing Angle X-Ray Scattering (GAXS)
  • Small Angle X-Ray Scattering (SAXS)
  • Pole Figure and Phi Scans for texture analysis.

Parameters for Semiconductor Structures:

• Layer thickness
• Full Width at Half Maximum (FWHM)
• Strain (tensile/compressive)
• Lattice mismatch
• Composition of layers
• Structural stress (texture and stress)

Additional Features:

• Special simulation programs (Global Fit, 3D Explorer) are used for detailed analysis of epitaxial thin films.
• Complex device structures such as lasers, detectors, and transistors can be analyzed.
• Measurement results and analysis are reported in a clear and structured format.

This system provides comprehensive structural characterization with high accuracy and flexibility, making it ideal for advanced research and analysis in fields like materials science, semiconductor technology, and nanotechnology.