Ongoing Projects
Completed Projects
Ongoing Projects
Supporting Organization Program Project Code | Dates | Title | |
---|---|---|---|
13 | ASELSAN M-2023-857 | 09.2023 09.2025 | Development of laser diode structure epitaxial growth processes |
12 | CUBAP M-2022-827 | 03.2022 03.2024 | Effect of varying NH3 density on the quality and surface morphology of AlN epicrystalline grown using c-oriented sapphire substrate for high power diode applications |
11 | TUBITAK 1001 121F371 | 03.2022 03.2025 | Growth and characterization of ultra-wideband-gap Rutile-Geo2 single crystal structures by low pressure chemical vapor deposition method |
10 | CUBAP MRK-2022-003 | 01.2022 01.2025 | Production of AlGaAs/GaAs Based Quantum Cascade Laser Crystals Radiating in the Mid-Infrared Region |
9 | CUBAP F-2021-649 | 12.2021 12.2023 | Si/AlN mirror development and optical analysis for telecommunications applications |
8 | TUBITAK 1001 121F168 | 10.2021 10.2024 | Design and growth of GaSb-based semiconductor saturable absorber mirror for 2.9 µm wavelength |
7 | CUBAP M-2021-821 | 10.2021 09.2023 | Determination of Structural and Optical Properties of InP/InGaAs structure at Different As Concentrations by Metal Organic Chemical Vapor Deposition Method |
6 | TUBITAK 1005 121F013 | 10.2021 04.2023 | Prototype production of optically pumped high power vertical external cavity surface emitting laser (VECSEL) |
5 | COST CA20116 | 06.2021 06.2025 | European Network for Innovative and Advanced Epitaxy (OPERA) |
4 | CUBAP M-2021-819 | 07.2021 07.2022 | Numerical investigation of diffraction patterns of small size apertures using light sources from XUV region to visible region |
3 | TUBITAK 1001 120F062 | 08.2020 02.2023 | InGaAs Gunn Diode-based light-emitting devices |
2 | ASELSAN MGEO-TE-2020-005 | 03.2020 04.2023 | Development of short wavelength infrared (SWIR) epilayer |
1 | TUBITAK 1001 120F322 | 04.2021 04.2023 | Development of near-infrared spectrum absorbing optical filter |
Completed Projects
Supporting Organization Program Project Code | Dates | Title | |
---|---|---|---|
38 | CUBAP M-798 | 09.2020 09.2021 | Epitaxial growth and structural characterization of Si-doped AIN thin films on sapphire substrates |
37 | CUBAP RGD-032 | 11.2019 02.2022 | Obtaining and characterizing metal oxide materials by sputtering and thermal evaporation methods |
36 | CUBAP M-772 | 07.2019 11.2020 | Investigation of the effect of cleaning the substrate surface with the RCA process on the growth rate in epitaxial AlN growth with MOVPE |
35 | CUBAP M-768 | 04.2019 11.2021 | Heteroepitaxial amplification of GaN layers with different V / III ratio and different magnification time with MOCVD system and characterization of the grown layers with PL system |
34 | TUBITAK 1001 118F425 | 03.2019 03.2021 | Growth, doping, characterization, and device fabrication of epitaxial AlN crystal with MOCVD for high power-frequency applications |
33 | CUBAP F-605 | 19.03.2019 19.01.2021 | Investigation of concentration and temperature-dependent change of photoluminescence properties of carbon-doped p-type GaAs |
32 | BAP FF150219B15 | 15.02.2019 15.03.2021 | Synthesis and investigation of metal-doped copper oxide thin films |
31 | CUBAP F-589 | 10.07.2018 10.01.2020 | Investigation of the surface properties of Graphene Nanowells (GNWs) produced on glass |
30 | CUBAP M-732 | 26.06.2018 26.06.2019 | Magnification of two-stage high-temperature GaN layer with different magnification times on patterned sapphire substrate with MOCVD and its effect on the structural characterization |
29 | CUBAP M-729 | 29.05.2018 25.12.2018 | Magnification and characterization of vertical cavity surface radiation laser structures with MOCVD |
28 | TUITAK 3001 117F339 | 15.03.2018 15.11.2019 | MOCVD amplification and characterization of AlN layer on unpatterned Si (111) substrate for ultraviolet device applications using atomic layer epitaxy technique |
27 | CUBAP M-699 | 24.10.2017 22.05.2019 | Investigation of the effect of hydrogen carrier gas amount on the structural, optical and surface characteristics of GaN epicrystalline grown with MOVPE |
26 | CUBAP M-691 | 12.09.2017 02.10.2018 | MOCVD amplification and HRXRD characterization of stress-balanced InxGa1-xAs / InyAl1-yAs based quantum cascade laser structures |
25 | TUBITAK 1003 116F365 | 01.07.2017 01.09.2021 | VCSEL-based high-power semiconductor lasers |
24 | CUBAP F-541 | 30.05.2017 11.09.2018 | Change of electronic energy depending on external parameters in InP / In0.53Ga0.47As lattice compatible quantum wells |
23 | CUBAP M-679 | 30.05.2017 13.11.2018 | Electronic properties of ternary GaAlAs / GaAs and GaInAs / GaAs nanostructures |
22 | CUBAP F-537 | 16.05.2017 29.05.2018 | Magnification of Al-doped and undoped ZnO semiconductor thin films by magnetron removal method and determination of optical parameters using reflection-wavelength measurement |
21 | CUBAP M-663 | 28.03.2017 28.03.2018 | Theoretical modeling of AlAs1-xPx / GaAs distributed Bragg reflectors |
20 | CUBAP F-493 | 17.06.2016 26.02.2019 | Electrical characterization of blue LED structure grown with MOCVD on safir alttas |
19 | CUBAP F-488 | 17.06.2016 17.04.2018 | Magnification and structural characterization of blue LED structure on safir alttas with MOCVD |
18 | CUBAP F-479 | 27.04.2016 10.01.2017 | Change of impurity binding energy in GaAs / Ga1-xInxAs quantum wells depending on pressure and In concentration |
17 | TUBITAK 1003 115-E-109 | 01.04.2016 01.04.2019 | Design, production and characterization of high efficiency LEDs for backlighting in smart displays |
16 | CUBAP F-444 | 12.06.2015 29.09.2016 | Characterization and theoretical modeling of GaAs / AlAs distributed Bragg reflectors (DBR) amplified by MOCVD method |
15 | TUBITAK 1007 113G103 | 01.02.2015 01.02.2018 | Development of LED chip prototype |
14 | CUBAP 2011K120251 | 29.01.2014 29.05.2020 | Cumhuriyet University Central Research Laboratory |
13 | SAN-TEZ 0573.STZ.2013-2 | 01.05.2014 30.04.2017 | Infrared long wavelength quantum cascade lasers |
12 | CUBAP F-401 | 03.09.2013 16.04.2015 | Electronic energy spectrum and impurity binding energy of GaAs / Ga1-xInxAs quantum wells |
11 | ASELSAN P2630031 | 23.11.2012 26.10.2016 | Short wavelength infrared (SWIR) detector (KANGAL) |
10 | CUBAP F-343 | 16.12.2011 23.11.2012 | Electrical characterization of GaN / GaA1N heterostructures with Hall system |
9 | CUBAP F-342 | 15.07.2011 16.07.2012 | Structural characterization of GaAs / GaA1As heterostructures by X-Ray diffraction method |
8 | CUBAP F-341 | 30.06.2011 29.06.2012 | Examination of GaN epitaxial single crystal thin films grown on sapphire substone by XRD method |
7 | TUBITAK 1001 109T726 | 01.10.2010 01.10.2014 | Production of high efficiency sequential GaxIn1-xP / GaxIn1-xAs solar cells and investigation of substrate effect |
6 | CUBAP F-320 | 05.08.2010 13.05.2015 | Examination of optical permeability and absorption coefficients of GaN and AlN thin films produced by metal organic chemical vapor storage method |
5 | CUBAP F-313 | 20.05.2010 20.05.2015 | Investigation of Co / Cr epitaxial single crystal thin films by XRD method |
4 | CUBAP F-275 | 11.09.2009 28.12.2010 | Dependence of hydrogenic impurity binding energy in GaAs / Ga1-xA1xAs cylindrical quantum wire on hydrostatic pressure |
3 | CUBAP F-252 | 26.08.2008 26.08.2011 | Examination of epitaxial single crystal thin films by XRD methods |
2 | TUBITAK 1001 108T015 | 15.06.2008 15.06.2012 | Cultivation and structural characterization of III-N based materials with MOCVD |
1 | CUBAP F-238 | 19.03.2008 19.02.2012 | Growth and characterization of GaN / GaAIN heterostructures on sapphire substrates |