21 December 2024

Nanovak Sputter/Thermal Combined System is a versatile high-vacuum deposition system used to create thin films or coatings on substrates in materials science and nanotechnology. The system includes an RF sputtering source, a DC sputtering source, and two thermal evaporation sources. RF/DC sputtering involves bombarding the target material with high-energy ions, causing atoms or molecules to be ejected and deposited onto a substrate. In thermal evaporation method, materials are heated and vaporized, then condensed onto the substrate, allowing controlled deposition. This combination of sputtering and thermal evaporation capabilities makes Nanovak system highly adaptable for various research and industrial applications, offering precise control over film thickness, composition, and uniformity.

• The system is equipped with a 300W, 13.56 MHz “RF Magnetron” sputtering source and a 600V, 1.5kW “DC Magnetron”sputtering source with digital current limiting.
• It includes an 8VAC-500A/4000 Watt AC sequential two-channel thermal power supply.
• The system features a 40 cm x 40 cm x 50 cm vacuum tank capable of achieving a sealing rate of 10⁻⁸ Torr·L/s.
• RF/DC sputtering can be performed with 1/2″, 1/4″, and 1/8″ targets.
• The system includes a pumping setup comprising a mechanical pump (≥ 24 m³/hour) and a molecular pump (400 L/s).
• When fully loaded, the system can achieve a vacuum level as low as 2 × 10⁻⁷ Torr.

• With a throttle valve and MFC gas flow control, stable enlargements can be achieved with precise pressure control between 3-50 mTorr.
• There is a 3-channel gas inlet (Ar, N2 and O2) controlled by MFC.
• Precise thickness adjustment can be made in the films to be produced with a measurement accuracy of 0.1 Å/s.

• The sample temperature can be adjusted up to 500 °C and controlled with a precision of ±1 °C using PID.
• Substrates with diameters up to 100 mm (4″) can be coated in the system.
• Samples can be rotated at speeds between 3-50 rpm, and adjustments in the Z direction can be made without disrupting the vacuum.
• The system includes a PLC-controlled external cooling unit with 2000 W of water cooling power.
• The system can prepare consecutive layers of metal, oxide, and nitride films.
• The system can work integrated with the Aixtron 200/4 RF-S MOCVD system.
• All system parameters can be controlled from the computer with the LabView program.