27 November 2024

Electrochemical Capacitance Voltage (ECV) Method

The Electrochemical Capacitance Voltage (ECV) method is a characterization technique used to determine the active dopant distribution in semiconductors with high precision. Capacitance-voltage (C-V) measurements are used to analyze the variation of free carrier density as a function of depth. The ECV system operates on the principle of controlled etching of the sample surface, with a C-V measurement taken at each etching step. This allows for the detailed mapping of doping profiles at the nanometer scale.

The system is capable of measuring the doping profiles of semiconductors such as Si, SiC, Ge, III-V group, and II-VI group materials as a function of depth.

The system can measure samples ranging from 2×5 mm² to 6 inches in diameter.

The doping profiles of n-type and p-type carriers can be tracked with a carrier concentration range of 10¹² to 10²¹ cm⁻³, and depth resolution as fine as 1 nm.

Multiple stacked layers can be measured consecutively.