| 1 |
Metal-Organic Chemical Vapor Deposition System (MOCVD)
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To Be Arranged According to the Training
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To Be Arranged According to the Training
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MOCVD System: Enables epitaxial growth of complex multilayer structures on 2” or 3” substrates of N and As/P-based semiconductors with nm-scale layer thickness and composition control.
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| 2 |
Sputter/Thermal Thin Film Deposition System
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To Be Arranged According to the Training
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To Be Arranged According to the Training
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Sputter/Thermal Thin Film Deposition System: Thin film growth on substrates up to 4 inches by RF/DC sputtering and thermal evaporation, with precise control of film thickness, composition, and uniformity.
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| 3 |
Optical Microscope (Nikon)
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Important Points Will Be Addressed During Practical Training
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3 Practices (1 Instructor + 2 Self)
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High-Resolution Optical Microscope: Designed for advanced imaging requirements, providing high-quality microscopic views for structural details of transparent and low-contrast samples.
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| 4 |
Optical Microscope (Zeiss)
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Important Points Will Be Addressed During Practical Training
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3 Practices (1 Instructor + 2 Self)
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Nomarski DIC Technique: Allows detailed and contrast-enhanced imaging of cells, microorganisms, and thin material layers, especially for transparent or low-contrast specimens.
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| 5 |
X-Ray Diffraction (XRD)
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To Be Arranged According to the Training
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4 Practices (2 Instructors + 2 Self)
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XRD (Thin Films): Determines diffraction patterns of X-rays from thin film samples. Identifies crystal phases, thickness, surface roughness, strain, and interlayer structures of films.
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| 6 |
X-Ray Diffraction (XRD)
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To Be Arranged According to the Training
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4 Practices (2 Instructors + 2 Self)
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XRD (Powders): Provides diffraction patterns of powders, determining phase analysis, crystal size, crystallographic orientation, and strain.
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| 7 |
X-Ray Diffraction (XRD)
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To Be Arranged According to the Training
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4 Practices (2 Instructors + 2 Self)
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XRR (X-ray Reflectivity): Measures thickness, density, and roughness of single or multilayer stacks on both crystalline and amorphous materials.
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| 8 |
IV-CV Measurement System
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2 Days
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4 Practices (2 Instructors + 2 Self)
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Electrical Measurements: I-V and C-V characterization of samples by applying voltage/current in a defined range.
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| 9 |
IV-CV Measurement System
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2 Days
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4 Practices (2 Instructors + 2 Self)
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I-V/C-V at Elevated Temperatures (25–700 °C): Determines electrical properties under thermal conditions.
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| 10 |
Solar Simulator
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2 Days
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4 Practices (2 Instructors + 2 Self)
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Solar Simulator: Simulates AM 1.5G spectrum between 350–1050 nm for I-V measurements of photovoltaic devices.
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| 11 |
Hall Effect Measurement System
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1 Day
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4 Practices (2 Instructors + 2 Self)
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Hall mobility, Hall voltage, I-V curves, resistance, and carrier concentration measurements are performed using the interaction between the current passing through the material and the applied magnetic field, with 4- or 6-contact sample holders.
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| 12 |
Hall Effect Measurement System
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3 Days
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4 Practices (2 Instructors + 2 Self)
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Hall mobility, Hall voltage, resistance, and carrier concentration measurements can be carried out in the temperature range of 80–300 K.
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| 13 |
Electrochemical Capacitance-Voltage (ECV) System
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3 Days
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4 Practices (2 Instructors + 2 Self)
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Electrochemical Capacitance-Voltage (ECV) measurement is a technique used to determine semiconductor doping profiles. This method detects the concentration distribution of dopants as a function of depth from the surface of the material. By monitoring capacitance changes under applied voltage, detailed information about the internal structure of the sample is obtained.
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| 14 |
Rapid Thermal Annealing Device (RTP)
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1 Day
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4 Practices (2 Instructors + 2 Self)
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The Rapid Thermal Processing (RTP) system enables rapid heating of materials under vacuum or controlled gas atmospheres at high temperatures for purposes such as improving mechanical properties of metals, crystallization of semiconductors, and defect removal. It is used for various semiconductor processes including annealing, quality control, rapid thermal treatments, and post-implantation annealing.
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| 15 |
UV-VIS-NIR Spectrophotometer
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2 Days
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4 Practices (2 Instructors + 2 Self)
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The UV-VIS-NIR spectrophotometer system is an optical characterization tool for measuring reflection, transmission, and absorption spectra of solid and liquid samples. From the obtained spectra, parameters such as thickness, bandgap, absorption coefficient, and refractive index can be calculated.
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| 16 |
Spectroscopic Ellipsometer
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1 Day
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4 Practices (2 Instructors + 2 Self)
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Ellipsometry provides information on film thickness, refractive index, extinction coefficient, etc., by measuring changes in the polarization of light reflected from the material.
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| 17 |
Spectroscopic Ellipsometer
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1 Day
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4 Practices (2 Instructors + 2 Self)
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Temperature-dependent measurement accessories allow the investigation of optical parameter variations up to ≤400 °C.
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| 18 |
Photoluminescence-Raman System
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2 Days
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4 Practices (2 Instructors + 2 Self)
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In photoluminescence (PL) measurements, the sample is excited by a light source, and the emitted light after interaction with the sample is analyzed to obtain information about the bandgap, defect structures, impurities, and optoelectronic properties of the material
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| 19 |
Photoluminescence-Raman System
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3 Days
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4 Practices (2 Instructors + 2 Self)
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At cryogenic temperatures (6.5–325 K), the intensity spectrum of the scattered light is obtained, and temperature-dependent measurements of the bandgap energy provide information on material defects.
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| 20 |
Photoluminescence-Raman System
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2 Days
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4 Practices (2 Instructors + 2 Self)
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Raman measurements are performed by analyzing the energy changes of scattered light when the sample is irradiated with a laser. This provides information on the types of chemical bonds, bond structures, bond lengths and angles, molecular vibrations and rotations, the phase state and chemical composition of the sample, as well as stress, strain, temperature, and pressure effects on the material.
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| 21 |
Atomic Force Microscope (AFM)
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3 Days
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4 Practices (2 Instructors + 2 Self)
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The High-Performance Atomic Force Microscope (AFM) operates in contact and dynamic modes depending on the interaction between the tip and the surface. AFM data allows the generation of topographic maps of the surface, providing measurements of roughness, texture, and other surface properties.
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| 22 |
Profilometer (Dektak)
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Important Points Will Be Addressed During Practical Training
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3 Practices (1 Instructor + 2 Self)
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The Contact Profilometer is a precision device used to analyze the surface topography of materials at the microscopic scale. It is used to determine conventional surface properties such as roughness, step height, curvature, and shape of various sizes and types of materials.
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| 23 |
Optical Profilometer
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Important Points Will Be Addressed During Practical Training
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3 Practices (1 Instructor + 2 Self)
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The Optical Profilometer provides 2D and 3D measurements taken from a single point, line, or area. It enables the determination of surface topographic features such as morphology, step heights, and surface roughness.
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