| 1 |
MOCVD Material Growth/Coating |
Material Growth using AIXTRON 200/4 RF-S MOCVD |
Special pricing will be provided. |
With the MOCVD system, epitaxial growth of complex multi-layer structures can be performed on 2” or 3” substrates, with precise control over layer thickness and composition at the nanometer scale, for N and As/P based semiconductors. |
| 2 |
MOCVD Material Growth/Coating |
Growth with NVTS-500-2TH1DC1RF Sputter / Thermal Evaporation |
1000 TRY/Hour (Consumables are not included in the price.) |
Using the Sputter/Thermal Thin Film Deposition system, thin film growth can be achieved on substrates up to 4 inches, with precise control over film thickness, composition, and uniformity, employing RF/DC sputtering and thermal evaporation methods.
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| 3 |
HEMS
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Room Temperature Hall Measurement (RT-HEMS)
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1000 TRY/hour (Sample preparation is not included in the price.)
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The Hall mobility measurement, Hall voltage measurement, I-V curve measurements, resistance measurements, and carrier concentration measurements are performed by the interaction of the current passing through the material and the applied magnetic field, using a four or six contact sample holder.
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| 4 |
HEMS
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Low Temperature Hall Measurement (LT-HEMS)
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1500 TRY/piece (Liquid nitrogen used for cooling and sample preparation are not included in the price.)
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Hall mobility measurements, Hall voltage measurements, resistance measurements, and carrier concentration measurements can be performed between temperatures of 80-300K.
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| 5 |
IV-CV
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IV/CV Measurement with Keithley 4200-SCS Semiconductor Characterization System
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850 TRY/Hour (Sample preparation is not included in the price.)
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The electrical properties can be determined by measuring the current-voltage characteristics by applying a voltage or current within a specific voltage range to the sample.
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| 6 |
IV-CV
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Temperature-Dependent I-V/C-V Measurement with Keithley 4200-SCS Semiconductor Characterization System
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1250 TRY/Hour (Sample preparation is not included in the price.)
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The electrical properties can be determined by performing IV-CV measurements between 25-700°C temperatures.
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| 7 |
IV-CV
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Ossila Solar Simulator with I-V Measurement
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1000 TRY/Hour (Sample preparation is not included in the price.)
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Using the AAA class solar simulator, the AM 1.5G spectrum can be simulated in the wavelength range of 350-1050 nm, enabling I-V measurements.
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| 8 |
High-Resolution X-Ray Diffraction (HR-XRD)
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Thin Film Measurement with Rigaku SmartLab High-Resolution X-Ray Diffraction System
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1000 TRY/Hour
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X-ray Diffraction (XRD) can be used to obtain X-ray diffraction patterns of thin film samples. It is a precise technique used to determine the crystalline structure, thickness, surface roughness, and stress characteristics of film layers. XRD not only identifies the crystal phases and structural properties of thin films but also allows for the examination of interlayer structures
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| 9 |
High-Resolution X-ray Diffraction (HR-XRD)
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Powder Sample Measurement with Rigaku SmartLab High-Resolution X-ray Diffraction System
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750 TRY/Hour
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Using XRD, diffraction patterns of powdered materials can be obtained. The phase analysis of the crystal structures in the sample, along with properties such as crystal sizes, crystallographic orientation, and strain, can be determined.
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| 10 |
High-Resolution X-ray Diffraction (HR-XRD)
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Simulation/Analysis
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It should be priced according to the structure.
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The structures are analyzed using the GlobalFit program.
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| 11 |
High-Resolution X-ray Diffraction (HR-XRD)
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With the Rigaku SmartLab High-Resolution X-ray Diffraction system, X-ray Reflectometry (XRR) is performed.
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2500 TRY/sample
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X-ray Reflectometry (XRR) analysis, used to determine the thickness, density, and roughness of single and multilayer stacks, can be performed on both crystalline and amorphous materials.
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| 12 |
Photoluminescence-Raman Spectrometer System
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Unidron RT-PL
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1250 TRY/sample (Special pricing available for 325 nm laser)
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In photoluminescence measurement, energy is applied to the sample using a light source, and after the interaction of the light with the sample, the emitted light is analyzed to obtain information about the materials bandgap, defect structures, impurities, and opto-electronic properties.
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| 13 |
Photoluminescence-Raman Spectrometer System
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LT-PL
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2000 TRY/Hour (Special pricing for 325 nm laser available)
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The light intensity spectrum scattered from the material is obtained at cryogenic temperatures (6.5 - 325 K), and the measurement of the band gap energy as a function of temperature provides information about the materials defects.
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| 14 |
Photoluminescence-Raman Spectrometer System
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Raman Mapping
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Special pricing will be provided
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Raman mapping is performed by acquiring Raman spectra from different points on the surface of a sample. This allows for the detailed mapping of the samples chemical and structural properties, phase distribution, component homogeneity, and possible structural changes.
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| 15 |
Photoluminescence-Raman Spectrometer System
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Raman Spectrum Measurement
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750 TRY/Hour
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Raman measurements are performed by analyzing the changes in the energy of light scattered from a sample when it is exposed to a laser. This analysis provides information about the types of chemical bonds, bond structures, bond lengths, and angles, as well as how molecules vibrate and rotate. It also helps determine the phase state and chemical composition of the sample, as well as the effects of environmental factors such as stress, deformation, temperature, and pressure on the sample.
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| 16 |
Profilometer
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Nanomap LS 500 Contact Profilometer
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400 TRY/sample
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The Contact Profilometer is a precise instrument used to analyze the surface topography of materials at the microscopic scale. It is used to detect traditional surface properties such as surface roughness, step height, curvature, and shape for materials of various sizes and types.
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| 17 |
Profilometer
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ZeeScope Optical Profilometer
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400 TRY/sample
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With the Optical Profilometer, 2D and 3D measurements can be taken from a single point, a line, or an area. The profilometer allows the acquisition of topographical surface features such as surface morphology, step heights, and surface roughness.
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| 18 |
Atomic Force Microscope (AFM)
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High-Performance Atomic Force Microscope Contact Mode/Dynamic Mode
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1200 TL/Hour (If a new tip is requested, a 1000 TL tip fee will be charged additionally.)
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High-Performance Atomic Force Microscope can operate in contact and dynamic modes, depending on the nature of the interaction between the tip and the surface. The data obtained from the AFM allows the creation of topographic maps of the surface, enabling the measurement of surface roughness, texture, and other surface properties.
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| 19 |
UV-VIS-NIR Spectrometer
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Varian Cary 5000 UV-VIS-NIR Spectrophotometer for Reflection, Transmission, and Absorption
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350 TRY/Unit
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The UV-VIS-NIR spectrophotometer system is an optical characterization system that can measure the reflection, transmittance, and absorption spectra of solid and liquid samples. Parameters such as material thickness, bandgap, absorption coefficient, refractive index, etc., can be calculated from the spectra obtained using this system.
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| 20 |
Spectroscopic Ellipsometer
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OPT-S9000 Spectroscopic Ellipsometer for RT-Measurement
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900 TRY/Hour
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The ellipsometer measures the change in polarization that occurs during the reflection of light from the material, providing information about the films thickness, refractive index, extinction coefficient, and other properties.
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| 21 |
Spectroscopic Ellipsometer
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Temperature-Dependent Measurement with OPT-S9000 Spectroscopic Ellipsometer
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1200 TRY/Hour
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By using a temperature-dependent measurement setup, it is possible to examine the changes in optical parameters up to 400°C.
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| 22 |
Microscope
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Nikon Eclipse LV150N Optical Microscope
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200 TRY/Hour
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The optical microscope, designed for high-precision analysis and optimized for advanced imaging requirements, ensures the acquisition of high-quality images
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| 23 |
Microscope
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Zeiss Axiolab 5 Nomarski Microscope
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200 TRY/Hour
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Using the Nomarski DIC technique, detailed and high-contrast images of cells, microorganism structures, and thin material layers can be obtained. This microscope is particularly effective in providing clear visualization of structural details in transparent and weakly contrasted samples.
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| 24 |
Mass Spectrometer
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VS Series Helium Mass Spectrometer Leak Detector
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25000/day (Leak test measurements will be conducted with an expert). For on-site measurements, transportation fees are the responsibility of the requester. Helium gas charges are excluded.
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The Helium Mass Spectrometer Leak Detector is an advanced device used to detect and measure leaks in various systems that use helium as a tracer gas. The leak detector separates the helium in the tested environment and, with its mass spectrometer, measures the amount of helium drawn, enabling highly precise leak detection.
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| 25 |
Rapid Thermal Annealing
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Unitemp-100 Rapid Thermal Annealing
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375/unit
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The Rapid Thermal Processing System enables the rapid heating of materials in a vacuum environment or under a desired gas at high temperatures for various purposes such as improving the mechanical properties of metals, crystallization of semiconductors, and defect removal. It can be used for various semiconductor processes, annealing, quality control, rapid thermal treatments, and post-implantation annealing.
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| 26 |
Wire Bonder
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Kulicke and Soffa Model 4124 Gold Wire Bonder
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800 TRY/Hour
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With the gold wire bonder, conductive bonds can be made for an integrated circuit chip or any other device that requires connections.
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27
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Electrochemical Capacitance-Voltage Measurement (ECV)
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Electrochemical Capacitance-Voltage Measurement (ECV)
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5000/sample
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Electrochemical Capacitance-Voltage (C-V) measurement is a technique used to determine the doping profiles of semiconductors. This method detects the concentration distribution of dopants as a function of depth, starting from the surface of the material. By monitoring the capacitance changes with the applied voltage, it provides detailed information about the internal structure of the sample.
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