22 September 2025

The article titled “MOVPE growth of Si-doped AlN and Schottky diode fabrication”, carried out by CÜNAM researchers in collaboration with academics from Eskişehir Osmangazi University and Atatürk University, was published in Materials Science and Engineering: B and subsequently featured as a news item in Compound Semiconductor, one of the world’s leading news portals in semiconductor technologies.

Compound Semiconductor is an internationally respected news and analysis platform that covers the latest scientific and industrial developments ranging from wide-bandgap semiconductors to power electronics, photonics, and advanced communication technologies. The inclusion of our work here demonstrates not only our academic contributions but also the strong interest our results have attracted within both industry and research communities.

This study, conducted with the contributions of our Center Director Prof. Dr. İlkay Demir and our researcher İzel Perkitel, reveals how the structural, electrical, surface, and optical properties of AlN thin films vary depending on doping conditions, while also highlighting the potential of this material for optoelectronic devices capable of operating at high temperatures. Comprehensive characterization studies have clarified the relationships between film quality, surface morphology, and device performance, and the results once again confirm that AlN-based devices are strong candidates for next-generation power electronics applications.

🔗 For the full article: https://compoundsemiconductor.net/article/122508/Si-doped_AlN_films_for_Schottky_applications
Si-doped AlN films for Schottky applications – Compound Semiconductor News
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Si-doped AlN films for Schottky applications – Compound Semiconductor News