31 December 2024

Metal-Organic Chemical Vapor Deposition (MOCVD) technique refers to the epitaxial growth of thin films on a substrate in solid phase by using metal-organic precursors and hydrides in the vapor phase (such as compounds formed by Group V elements and hydrogen, including AsH3, NH3, PH3, etc.).

• AIXTRON 200/4 RF-S is an MOCVD system equipped with a horizontal flow reactor from the Aixtron brand.
• The MOCVD system is based on N and As/P.
• It has the capability to perform epitaxial growth at the nanoscale on 2” or 3” substrates.
• It is capable of growing complex multilayer epitaxial structures with precise control over layer thickness and composition.
• The reactor chamber is integrated with an M. Braun inert atmosphere glove box.
• It has the ability to reach high substrate temperatures (1450 ºC).
• It features a Radio Frequency (RF) heating system.
• III-group gas sources (Metal-Organic Sources):
  • Trimethyl Gallium – TMGa
  • Trimethyl Aluminum – TMAl
  • Trimethyl Indium – TMIn

• V-group gas sources (Hydrides):

• • Arsine – AsH3
  • Phosphine – PH3
  • Ammonia – NH3

• Doping gas sources:

• • Dimethyl Zinc – DMZn
  • Carbon Tetrabromide – CBr4
  • BisCyclopentadienemagnesium – CBr2Mg
  • Silane – SiH4

• Carrier gas sources:

• • Nitrogen (N2)
  • Hydrogen (H2)
• The system includes a LUXTRON control unit for in-situ reflection and temperature measurement.
• It includes comprehensive safety features such as emergency shutdown, gas leak detection, and sensors for detecting ammonia, phosphine, and hydrogen gases.
• The Metal-Organic sources are maintained in temperature-controlled water baths to balance vapor pressure.
• The amount of gases sent to the reactor is regulated by mass flow control elements.
• All mass flow controllers and pressure controllers in the MOCVD system are connected to a computer control interface unit.
• It has user-friendly software that provides precise control and real-time monitoring of all process parameters.
• The residual gases resulting from chemical reactions during the growth process are discharged from the reactor environment through the exhaust.