| 1 | Metalorganic Chemical Vapor Deposition System (MOCVD) | To be arranged according to the training programme | To be arranged according to the training programme | The MOCVD system enables the epitaxial growth of complex multilayer N- and As/P-based semiconductor structures on 2-inch or 3-inch substrates, with precise control of layer thickness and composition at the nanometre scale. |
| 2 | Sputter/Thermal Thin-Film Coating System | To be arranged according to the training programme | To be arranged according to the training programme | The system enables thin-film growth on substrates up to 4 inches using RF/DC sputtering and thermal evaporation, with precise control over film thickness, composition and uniformity. |
| 3 | Optical Microscope (Nikon) | Key points will be covered during practical training | 3 practical sessions (1 with instructor + 2 independently) | Designed for high-precision analysis and optimized for advanced imaging requirements, this optical microscope produces high-quality images. |
| 4 | Optical Microscope (Zeiss) | Key points will be covered during practical training | 3 practical sessions (1 with instructor + 2 independently) | Nomarski DIC enables detailed, high-contrast imaging of cells, microorganisms and thin material layers. It is especially effective for revealing structural detail in transparent and low-contrast samples. |
| 5 | X-Ray Diffraction (XRD) | To be arranged according to the training programme | 4 practical sessions (2 with instructor + 2 independently) | XRD provides diffraction patterns of thin-film samples and enables the determination of crystal structure, thickness, surface roughness, strain, crystalline phases and interfaces between layers. |
| 6 | X-Ray Diffraction (XRD) | To be arranged according to the training programme | 4 practical sessions (2 with instructor + 2 independently) | XRD provides diffraction patterns of powder materials and enables phase analysis as well as the determination of crystallite size, crystallographic orientation and strain. |
| 7 | IV-CV | 2 days | 4 practical sessions (2 with instructor + 2 independently) | Electrical properties are determined by applying voltage or current over a specified range and measuring the resulting current-voltage characteristics. |
| 8 | Hall Measurement System | 1 day | 4 practical sessions (2 with instructor + 2 independently) | Hall mobility, Hall voltage, I-V curves, resistance and carrier concentration can be measured through the interaction between the current flowing through the material and the applied magnetic field, using a four- or six-contact sample holder. |
| 9 | Electrochemical Capacitance-Voltage (ECV) System | 3 days | 4 practical sessions (2 with instructor + 2 independently) | Electrochemical capacitance-voltage measurement determines semiconductor doping profiles by monitoring depth-dependent dopant concentration and capacitance changes under an applied voltage. |
| 10 | Rapid Thermal Processing System (RTP) | 1 day | 4 practical sessions (2 with instructor + 2 independently) | The rapid thermal processing system rapidly heats materials under vacuum or a selected gas atmosphere for semiconductor processing, annealing, defect removal, quality control and post-implantation annealing. |
| 11 | UV-VIS-NIR Spectrometer | 2 days | 4 practical sessions (2 with instructor + 2 independently) | The system measures reflectance, transmittance and absorbance spectra of solid and liquid samples. Parameters such as thickness, band gap, absorption coefficient and refractive index can be calculated from the spectra. |
| 12 | Spectroscopic Ellipsometer | 1 day | 4 practical sessions (2 with instructor + 2 independently) | The ellipsometer measures changes in polarization upon reflection from a material, providing information on film thickness, refractive index, extinction coefficient and related properties. |
| 13 | Spectroscopic Ellipsometer | 1 day | 4 practical sessions (2 with instructor + 2 independently) | A temperature-dependent stage enables investigation of changes in optical parameters at temperatures up to 400 °C. |
| 14 | Photoluminescence-Raman System | 2 days | 4 practical sessions (2 with instructor + 2 independently) | Photoluminescence analysis provides information about a material’s band gap, defect structures, impurities and optoelectronic properties by analysing light emitted after excitation. |
| 15 | Photoluminescence-Raman System | 3 days | 4 practical sessions (2 with instructor + 2 independently) | The intensity spectrum of light emitted from a material cooled to cryogenic temperatures (6.5–325 K) is recorded, enabling temperature-dependent band-gap measurements and defect investigation. |
| 16 | Photoluminescence-Raman System | 2 days | 4 practical sessions (2 with instructor + 2 independently) | Raman measurements provide information on chemical bond types and geometry, molecular vibration and rotation, phase and chemical structure, stress and deformation, and the effects of temperature and pressure. |
| 17 | Atomic Force Microscope (AFM) | 3 days | 4 practical sessions (2 with instructor + 2 independently) | The high-performance AFM operates in contact or dynamic mode and generates topographic maps for measuring surface roughness, texture and other surface properties. |
| 18 | Profilometer (Dektak) | Key points will be covered during practical training | 3 practical sessions (1 with instructor + 2 independently) | The contact profilometer analyses surface topography at the microscopic scale and measures roughness, step height, curvature and form on different materials. |
| 19 | Optical Profilometer | Key points will be covered during practical training | 3 practical sessions (1 with instructor + 2 independently) | The optical profilometer performs 2D and 3D measurements from a point, line or area and provides topographic properties such as surface morphology, step heights and surface roughness. |
