Laser Diode Structure and the Development of Epitaxial Growth Processes

Quantum Cascade Lasers, Devices, and Applications (Kuantay)

Epitaxial growth and characterization of ultra-wideband rutile-GeO2 single crystal structures by low-pressure chemical vapor deposition method

European Network for Innovative and Advanced Epitaxy (OPERA)

Production of AlGaAs/GaAs-Based Quantum Cascade Laser Crystals Emitting in the Mid-Infrared Region

Production of AlGaAs/GaAs-based Quantum Cascade Laser Crystals Emitting in the Mid-Infrared Region

Effect of varying NH3 concentration on the quality and surface morphology of AlN epilayers grown on c-oriented sapphire substrates for high-power diode applications.

Determination of the structural and optical properties of InP/InGaAs structure grown with different As concentrations using Metal-Organic Chemical Vapor Deposition (MOCVD) method.

Numerical investigation of diffraction patterns of small apertures using light sources from the XUV region to the visible spectrum.

InGaAs Gunn diode-based light-emitting devices.

Development of short-wavelength infrared (SWIR) epitaxial layers.

Development of an absorbent optical filter for the near-infrared spectrum.

Epitaxial growth and structural characterization of Si-doped AlN thin films on sapphire substrates.

Production and characterization of metal oxide materials using sputtering and thermal evaporation methods.

Investigation of the effect of substrate surface cleaning with the RCA process on the growth rate in the epitaxial AlN growth by MOVPE.

Heteroepitaxial growth of GaN films with different V/III ratios and growth times using the MOCVD system, and characterization of the grown layers using a PL system.

MOCVD growth, doping, characterization, and device fabrication of epitaxial AlN crystals for high power-frequency applications.

Investigation of the concentration and temperature-dependent variation of photoluminescence properties of carbon-doped p-type GaAs.

Synthesis of metal-doped copper oxide thin films and investigation of their properties.

Investigation of the surface properties of Graphene Nanowalls (GNWs) produced on glass.

MOCVD growth of a two-step high-temperature GaN layer with different growth durations on patterned sapphire substrates and its effect on structural characterization.

MOCVD growth and characterization of vertical-cavity surface-emitting laser (VCSEL) structures.

Mor ötesi aygıt uygulamalar için desensiz Si(111) alttaşı üzerine AlN tabakasının atmalı atomik tabaka epitaksi tekniği kullanılarak MOCVD ile büyütülmesi ve karakterizasyonu

Hidrojen taşıyıcı gaz miktarının MOVPE ile büyütülen GaN epikristalinin yapısal, optiksel ve yüzeysel karakteristiklerine etkisinin araştırılması

MOCVD growth and HRXRD characterization of strain-balanced InxGa1-xAs/InyAl1-yAs-based quantum cascade laser structures.

VCSEL-based high-power semiconductor lasers.

Variation of electronic energy with external parameters in InP/In0.53Ga0.47As strain-balanced quantum wells.

Electronic properties of triple GaAlAs/GaAs and GaInAs/GaAs nanostructures.

Growth of Al-doped and undoped ZnO semiconductor thin films by magnetron sputtering and determination of their optical parameters using reflection-wavelength measurements.

Theoretical modeling of AlAs1-xPx/GaAs distributed Bragg reflectors.

Electrical characterization of blue LED structure grown on sapphire substrate by MOCVD.

MOCVD growth and structural characterization of blue LED structure on sapphire substrate.

Pressure and In concentration-dependent variation of impurity binding energy in GaAs/Ga1-xInxAs quantum wells.

Design, production, and characterization of high-efficiency LEDs for backlighting in smart displays.

Characterization and theoretical modeling of GaAs/AlAs distributed Bragg reflectors (DBR) grown by the MOCVD method

Development of LED chip prototype.

Sivas Cumhuriyet University Central Research Laboratory.

Infrared long-wavelength quantum cascade lasers.

Electronic energy spectrum and impurity binding energy of GaAs/Ga1-xInxAs quantum wells.

Short-Wave Infrared (SWIR) Detector (KANGAL).

Electrical characterization of GaN/GaAlN heterostructures using the Hall effect system.

Structural characterization of GaAs/GaAlAs heterostructures using X-ray diffraction method.

Investigation of GaN epitaxial single-crystal thin films grown on sapphire substrates using the XRD method

Production of high-efficiency tandem GaxIn1-xP/GaxIn1-xAs solar cells and investigation of substrate effects

Investigation of Optical Transmittance and Absorption Coefficients of GaN and AlN Thin Films Produced by Metal-Organic Chemical Vapor Deposition (MOCVD) Method

Investigation of Co/Cr Epitaxial Single Crystal Thin Films Using XRD Method

The Dependence of the Hydrogenic Impurity Binding Energy on Hydrostatic Pressure in GaAs/Ga1-xAlxAs Cylindrical Quantum Wires

Investigation of Epitaxial Single-Crystal Thin Films Using XRD Methods

MOCVD Growth and Structural Characterization of III-Nitride Based Materials

Growth and Characterization of GaN/GaAlN Heterostructures on Sapphire Substrates