| 1 |
MOCVD Material Growth/Coating
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Material Growth using AIXTRON 200/4 RF-S MOCVD
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Special pricing will be provided.
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With the MOCVD system, epitaxial growth of complex multi-layer structures can be performed on 2” or 3” substrates, with precise control over layer thickness and composition at the nanometer scale, for N and As/P based semiconductors.
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| 2 |
MOCVD Material Growth/Coating
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Growth with NVTS-500-2TH1DC1RF Sputter / Thermal Evaporation
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1000 TRY/Hour (Consumables are not included in the price.)
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Using the Sputter/Thermal Thin Film Coating Device, thin film growth can be carried out on substrates up to 4 inches, with precise control over film thickness, composition, and uniformity through RF/DC sputtering and thermal evaporation methods.
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| 3 |
HEMS
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Room Temperature Hall Measurement (RT-HEMS)
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1500 TRY/hour (Sample preparation is not included in the price.)
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The Hall mobility measurement, Hall voltage measurement, I-V curve measurements, resistance measurements, and carrier concentration measurements are performed by the interaction of the current passing through the material and the applied magnetic field, using a four or six contact sample holder.
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| 4 |
HEMS
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Low Temperature Hall Measurement (LT-HEMS)
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1500 TRY/piece (Liquid nitrogen used for cooling and sample preparation are not included in the price.)
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Hall mobility measurements, Hall voltage measurements, resistance measurements, and carrier concentration measurements can be performed between temperatures of 80-300K.
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| 5 |
IV-CV
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IV/CV Measurement with Keithley 4200-SCS Semiconductor Characterization System
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850 TRY/Hour (Sample preparation is not included in the price.)
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The electrical properties can be determined by measuring the current-voltage characteristics by applying a voltage or current within a specific voltage range to the sample.
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| 6 |
IV-CV
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Temperature-Dependent I-V/C-V Measurement with Keithley 4200-SCS Semiconductor Characterization System
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1250 TRY/Hour (Sample preparation is not included in the price.)
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The electrical properties can be determined by performing IV-CV measurements between 25-700°C temperatures.
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| 7 |
IV-CV
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Ossila Solar Simulator with I-V Measurement
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1000 TRY/Hour (Sample preparation is not included in the price.)
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With the solar simulator, the AM 1.5G spectrum can be simulated in the wavelength range of 350-1050 nm, and I-V measurements can be performed using an AAA-class solar simulator.
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| 8 |
High-Resolution X-Ray Diffraction (HR-XRD)
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Thin Film Measurement with Rigaku SmartLab High-Resolution X-Ray Diffraction System
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1000 TRY/Hour
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X-ray Diffraction (XRD) can be used to obtain X-ray diffraction patterns of thin film samples. It is a precise technique used to determine the crystalline structure, thickness, surface roughness, and stress characteristics of film layers. XRD allows for the determination of crystal phases and structural properties of thin films, while also enabling the examination of interlayer structures.
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| 9 |
High-Resolution X-ray Diffraction (HR-XRD)
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Powder Sample Measurement with Rigaku SmartLab High-Resolution X-ray Diffraction System
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750 TRY/Hour
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Using XRD, diffraction patterns of powdered materials can be obtained. The phase analysis of the crystal structures in the sample, along with properties such as crystal sizes, crystallographic orientation, and strain, can be determined.
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| 10 |
High-Resolution X-ray Diffraction (HR-XRD)
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Simulation/Analysis
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It should be priced according to the structure.
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The structures are analyzed using the GlobalFit program.
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| 11 |
High-Resolution X-ray Diffraction (HR-XRD)
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X-ray Reflectometry (XRR) with the Rigaku SmartLab High-Resolution X-Ray Diffraction System
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2500 TRY/sample
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X-ray Reflectometry (XRR) analysis, used to determine the thickness, density, and roughness of single and multilayer stacks, can be performed on both crystalline and amorphous materials.
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| 12 |
Photoluminescence-Raman Spectrometer System
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Unidron RT-PL
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1250 TRY/sample (Special pricing available for 325 nm laser)
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In photoluminescence measurement, energy is applied to the sample using a light source, and after the interaction of the light with the sample, the emitted light is analyzed to obtain information about the materials bandgap, defect structures, impurities, and opto-electronic properties.
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| 13 |
Photoluminescence-Raman Spectrometer System
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LT-PL
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2000 TRY/Hour (Special pricing for 325 nm laser available)
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The intensity spectrum of the light scattered from the material, which can be cooled to cryogenic temperatures (6.5–325 K) is obtained, and the defect information of the material is determined by measuring the temperature dependence of the band gap energy.
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| 14 |
Photoluminescence-Raman Spectrometer System
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Photoluminescence (PL) Measurement System for Liquid Samples
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1250 TRY/hour (Special pricing for 325 nm laser available)
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The emission spectrum of light from a liquid sample is analyzed to determine the bandgap energy (Eg), defect/impurity bands, and radiative recombination characteristics.
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| 15 |
Photoluminescence-Raman Spectrometer System
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Photoluminescence (PL) Measurement System for Powder Samples
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1250 TRY/hour (Special pricing for 325 nm laser available)
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The powder sample is prepared as a thin layer, and after optical excitation, the emitted PL spectrum is recorded. Analysis of peak position, intensity, and FWHM provides information on Eg, defect emissions, and surface states.
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| 16 |
Photoluminescence-Raman Spectrometer System
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Raman Mapping
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Special pricing will be provided
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Raman mapping is performed by acquiring Raman spectra from different points on the surface of a sample. This allows for the detailed mapping of the samples chemical and structural properties, phase distribution, component homogeneity, and possible structural changes.
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| 17 |
Photoluminescence-Raman Spectrometer System
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Raman Spectrum Measurement
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750 TRY/Hour
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Raman measurements are performed by analyzing the changes in the energy of light scattered from a sample when it is exposed to a laser. This analysis provides information about the types of chemical bonds, bond structures, bond lengths, and angles, as well as how molecules vibrate and rotate. It also helps determine the phase state and chemical composition of the sample, as well as the effects of environmental factors such as stress, deformation, temperature, and pressure on the sample.
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| 18 |
Photoluminescence-Raman Spectrometer System
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LT-Raman
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2000 TRY/hour
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Low-temperature Raman spectroscopy analyzes the scattered light intensity spectrum of a material cooled within the 6.5–325 K range. Temperature-dependent variations in peak position (shift), intensity, and full width at half maximum (FWHM) are examined to quantitatively evaluate phonon energies and lifetimes, crystal defects/dislocations, strain, and possible phase transitions.
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| 19 |
Photoluminescence-Raman Spectrometer System
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Raman Measurement System for Liquid Samples
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750 TRY/hour
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The liquid sample is placed in a quartz cuvette and excited by a laser. The scattered light spectrum is analyzed to determine the vibrational modes of molecules and the characteristics of chemical bonds.
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| 20 |
Photoluminescence-Raman Spectrometer System
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Raman Measurement System for Powder Samples
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750 TRY/hour
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Raman spectroscopy is performed by irradiating the powdered sample with laser light and analyzing small energy shifts in the scattered light. This reveals the types of chemical bonds and crystalline phases present, as well as strain, defects, and deformations within the sample.
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| 21 |
Profilometer
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Nanomap LS 500 Contact Profilometer
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400 TRY/sample
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The Contact Profilometer is a precise instrument used to analyze the surface topography of materials at the microscopic scale. It is used to detect conventional surface properties such as surface roughness, step height, curvature, and shape for materials of various sizes and types.
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| 22 |
Profilometer
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ZeeScope Optical Profilometer
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400 TRY/sample
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With the Optical Profilometer, 2D and 3D measurements can be taken from a single point, a line, or an area. The profilometer allows the acquisition of topographical surface features such as surface morphology, step heights, and surface roughness.
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| 23 |
Atomic Force Microscope (AFM)
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High-Performance Atomic Force Microscope Contact Mode/Dynamic Mode
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1200 TRY/Hour (If a new tip is requested, a 1000 TL tip fee will be charged additionally.)
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High-Performance Atomic Force Microscope can operate in contact and dynamic modes, depending on the nature of the interaction between the tip and the surface. The data obtained from the AFM allows the creation of topographic maps of the surface, enabling the measurement of surface roughness, texture, and other surface properties.
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| 24 |
UV-VIS-NIR Spectrometer
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Varian Cary 5000 UV-VIS-NIR Spectrophotometer for Reflection, Transmission, and Absorption
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350 TRY/Unit
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The UV-VIS-NIR spectrophotometer system is an optical characterization system that can measure the reflection, transmittance, and absorption spectra of solid and liquid samples. Parameters such as material thickness, bandgap, absorption coefficient, refractive index, etc., can be calculated from the spectra obtained using this system.
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| 25 |
Spectroscopic Ellipsometer
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OPT-S9000 Spectroscopic Ellipsometer for RT-Measurement
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900 TRY/Hour
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The ellipsometer can provide information about the thickness, refractive index, extinction coefficient, etc. of films by measuring the change in polarization of light as it is reflected from the material.
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| 26 |
Spectroscopic Ellipsometer
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Temperature-Dependent Measurement with OPT-S9000 Spectroscopic Ellipsometer
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1200 TRY/Hour
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By using a temperature-dependent measurement setup, it is possible to examine the changes in optical parameters up to ≤400°C
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| 27 |
Microscope
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Nikon Eclipse LV150N Optical Microscope
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200 TRY/Hour
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The optical microscope, designed for high-precision analysis and optimized for advanced imaging requirements, ensures the acquisition of high-quality images
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| 28 |
Microscope
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Zeiss Axiolab 5 Nomarski Microscope
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200 TRY/Hour
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Using the Nomarski DIC technique, detailed and high-contrast images of cells, microorganism structures, and thin material layers can be obtained. This microscope is particularly effective in providing clear visualization of structural details in transparent and weakly contrasted samples.
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| 29 |
Mass Spectrometer
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VS Series Helium Mass Spectrometer Leak Detector
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25000/day (Leak test measurements will be conducted with an expert). For on-site measurements, transportation fees are the responsibility of the requester. Helium gas charges are excluded.
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The Helium Mass Spectrometer Leak Detector is an advanced device used to detect and measure leaks in various systems that use helium as a tracer gas. The leak detector separates the helium in the tested environment and, with its mass spectrometer, measures the amount of helium drawn, enabling highly precise leak detection.
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| 30 |
Rapid Thermal Annealing
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Unitemp-100 Rapid Thermal Annealing
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375/unit
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The Rapid Thermal Processing System enables the rapid heating of materials in a vacuum environment or under a desired gas at high temperatures for various purposes such as improving the mechanical properties of metals, crystallization of semiconductors, and defect removal. It can be used for various semiconductor processes, annealing, quality control, rapid thermal treatments, and post-implantation annealing.
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| 31 |
Wire Bonder
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Kulicke and Soffa Model 4124 Gold Wire Bonder
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800 TRY/Hour
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With the gold wire bonder, conductive bonds can be made for an integrated circuit chip or any other device that requires connections.
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32
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Electrochemical Capacitance-Voltage Measurement (ECV)
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Electrochemical Capacitance–Voltage (ECV) Measurement on Silicon
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5000/sample
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Electrochemical Capacitance-Voltage (ECV) measurement is a technique used to determine the doping profiles of semiconductors. This method detects the concentration distribution of dopants depending on the depth, starting from the surface of the material. By monitoring the capacitance changes with the applied voltage, it provides detailed information about the internal structure of the sample.
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33
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Electrochemical Capacitance-Voltage Measurement (ECV)
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Electrochemical Capacitance–Voltage (ECV) Measurement on As/P-Based Materials
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5000/sample
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Electrochemical Capacitance-Voltage (ECV) measurement is a technique used to determine the doping profiles of semiconductors. This method detects the concentration distribution of dopants depending on the depth, starting from the surface of the material. By monitoring the capacitance changes with the applied voltage, it provides detailed information about the internal structure of the sample.
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34
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Potentiostat/Galvanostat
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Cyclic Voltammetry (CV), Galvanostatic Charge–Discharge (GCD), Electrochemical Impedance Spectroscopy (EIS)
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500 TRY/sample, 750 TRY/hour
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Cyclic Voltammetry (CV), Galvanostatic Charge–Discharge (GCD), and Electrochemical Impedance Spectroscopy (EIS) are complementary techniques that comprehensively characterize the electrochemical behavior of a material. CV reveals oxidation–reduction processes and the redox properties of the material by scanning the potential forward and backward. GCD determines the energy-storage performance—such as capacity, internal resistance, and cycling stability—by monitoring the potential change under a constant current. EIS, on the other hand, measures the response to an AC signal applied over a wide frequency range, providing detailed information about the internal structure of the system, including charge-transfer resistance, ion diffusion, and interfacial properties. When used together, these three methods enable highly accurate evaluation of the electrochemical properties of materials such as semiconductors, thin films, batteries, and supercapacitors.
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35
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Four-Point Probe Measurement
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Surface Resistance Measurement
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100 TRY/sample
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The surface resistance measurement method is a fundamental technique used to determine the electrical conductivity on thin films and semiconductor surfaces. This method typically employs a four-point probe configuration to prevent contact resistance from affecting the measurements. Based on the current applied to the sample and the voltage measured, the resistance per square of the surface is calculated. In this way, precise and reliable information about the conductivity properties of the material is obtained. This technique is particularly important for semiconductor process control, thin-film characterization, and quality monitoring.
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36
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Four-Point Probe Measurement
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Surface Mapping
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350 TRY/sample
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Surface mapping is the collection of surface resistance measurements taken from different points of a sample in a defined pattern and the use of these data to evaluate the conductivity distribution across the surface. This method helps reveal homogeneity in the material, local conductivity variations, manufacturing-related defects, and differences in thin-film thickness. The obtained results provide important information for semiconductor wafers, thin films, and material process development studies.
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